| PART |
Description |
Maker |
| MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MICA RoHS Compliant: No
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420M |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| MX26C4000B MX26C4000BMC-10 MX26C4000BMC-12 MX26C40 |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
|
MCNIX[Macronix International]
|
| LC86P6548 LC866528 LC866540 LC866524 LC866532 LC86 |
8-Bit Single Chip Microcontroller with One-Time Programmable PROM
|
SANYO[Sanyo Semicon Device]
|
| HMC856LC5 |
28 Gbps 5-BIT DIGITAL TIME DELAY WITH PROGRAMMABLE OUTPUT VOLTAGE
|
Hittite Microwave Corpo...
|
| HN27C101ATT |
131072-word 5 8-bit CMOS One Time Electrically Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| SST37VF512_06 SST37VF010 SST37VF010-70-3C-NH SST37 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
Silicon Storage Technol...
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
http://
|
| HN27512P-25 |
EPROM, 65536-Word, 8-Bit One Time Electrically Programmable Read Only Memory
|
Renesas Technology / Hitachi Semiconductor
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| M29F200T-55M1R M29F200T-55M3R M29F200T-55N1R M29F2 |
Single SVS For 3.3V Systems W/Programmable Time Delay 8-PDIP -40 to 125 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Adjustable Single SVS W/Programmable Time Delay 8-PDIP -40 to 125 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
Single 2-Input Positive-NOR Gate 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single 2-Input Positive-OR Gate 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位256Kb x828KB的x16插槽，启动座单电源闪
Single 2-Input Positive-NOR Gate 5-SOT -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Inverter Buffer/Driver with Open-Drain Output 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
CONNECTOR ACCESSORY 连接器附
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-US8 -40 to 85
Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85
Micropower Supply Voltage Supervisor 8-TSSOP
Adjustable Single SVS W/Programmable Time Delay 8-PDIP -40 to 85
Adjustable Single SVS W/Programmable Time Delay 8-TSSOP -40 to 85
Single SVS For 3.3V Systems W/Programmable Time Delay 8-TSSOP
Single SVS For 3.3V Systems W/Programmable Time Delay 8-SOIC -40 to 85
Micropower Supply Voltage Supervisor 8-PDIP -40 to 85
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs 8-CDIP -55 to 125
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
Single 2-Input Positive-NAND Gate 5-SC70 -40 to 85
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP 20-SOIC 0 to 70
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PDIP -25 to 85
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| SST37VF010 SST37VF010-70-3C-NH SST37VF010-70-3C-PH |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 90 ns, PDIP32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
DIODE ZENER SINGLE 300 - 350mW 47Vz 2mA-Izt 0.0638 0.1uA-Ir 32.9 SOT-23 3K/REEL 128K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
DIODE ZENER SINGLE 300 - 350mW 43Vz 2mA-Izt 0.0698 0.1uA-Ir 30.1 SOT-23 3K/REEL
DIODE ZENER SINGLE 300mW 4.3Vz 5mA-Izt 0.0698 3uA-Ir 1 SOT-23 3K/REEL
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
SST[Silicon Storage Technology, Inc]
|
